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Description : Radiation-Hardened 8K x 8 SRAM -- SEU Hard

INTRODUCTION
The UT67164 SRAM is a high performance, asynchronous, radiation-hardened, 8K x 8 random access memory conforming to industry-standard fit, form, and function. The UT67164 SRAM features fully static operation requiring no external clocks or timing strobes. UTMC designed and implemented the UT67164 using an advanced RadiationHardened twin-well CMOS process. Advanced CMOS processing along with a device enable/disable function result in a high performance, power-saving SRAM. The combination of radiation-hardness, fast access time, and low power consumption make UT67164 ideal for high-speed systems designed for operation in radiation environments.

FEATURES
❐ 55ns maximum address access time, single-event upset less than 1.0E-10 errors//bit day (-55oC to 125+oC)
❐ Asynchronous operation for compatibility with industrystandard 8K x 8 SRAM
❐ TTL-compatible input and output levels
❐ Three-state bidirectional data bus
❐ Low operating and standby current
❐ Full military operating temperature range, -55oC to 125+oC, screened to specific test methods listed in Table I MIL-STD- 883 Method 5004 for Class S or Class B
❐ Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883 Method 1019
    - Total-dose: 1.0E6 rads(Si)
    - Dose rate upset: 1.0E9 rads (Si)/sec
    - Dose rate survival: 1.0E12 rads (Si)/sec
    - Single-event upset: <1.0E-10 errors/bit-day
❐ Industry standard (JEDEC) 64K SRAM pinout
❐ Packaging options:
    - 28-pin 100-mil center DIP (.600 x 1.2)
    - 28-pin 50-mil center flatpack (.700 x .75)
❐ 5-volt operation
❐ Post-radiation AC/DC performance characteristics guaranteed by MIL-STD-883 Method 1019 testing at 1.0E6 rads(Si)

Part Name(s) : U6264AS1A07 U6264ASA07
Zentrum Mikroelektronik Dresden AG
Zentrum Mikroelektronik Dresden AG
Description : Automotive 8K x 8 SRAM

Description
The U6264ASA07 is a static RAM manufactured using a CMOS process technology with the following operating modes:
    - Read - Standby
    - Write - Data Retention
The memory array is based on a 6-transistor cell.
   
Features
❐ 8192 x 8 bit static CMOS RAM
❐ 70 ns Access Time
❐ Common data inputs and outputs
❐ Three-state outputs
❐ Typ. operating supply current:
    30 mA
❐ TTL/CMOS-compatible
❐ Automatic reduction of power
    dissipation in long Read or Write
    cycles
❐ Power supply voltage 5 V
❐ Operating temperature ranges
    -40 to 125 °C
❐ Quality assessment according to
    CECC 90000, CECC 90100 and
    CECC 90111
❐ ESD protection > 2000 V
    (MIL STD 883C M3015.7)
❐ Latch-up immunity > 100 mA
❐ Packages: SOP28 (300 mil)
                      SOP28 (330 mil)
   

Part Name(s) : BR6265 BR6265-12LL
ROHM Semiconductor
ROHM Semiconductor
Description : 8K X 8 CMOS SRAM

8K X 8 CMOS SRAM

Description : Fast 8K x 8 SRAM

Description
The U62H64 is a static RAM manufactured using a CMOS process technology with the following operating modes:
    - Read - Standby
    - Write - Data Retention
The memory array is based on a 6-transistor cell

Features
❐ Fast 8192 x 8 bit static CMOS RAM
❐ 20 ns, 25 ns, 35 ns Access Times
❐ Bidirectional data inputs and data outputs
❐ Three-state outputs
❐ Data retention current at 3 V: < 10 µA (standard)
❐ Standby current standard < 30 µA
❐ Standby current low power (L) < 5 µA
❐ TTL/CMOS-compatible
❐ Automatic reduction of power dissipation in long Read or Write cycles
❐ Power supply voltage 5 V
❐ Operating temperature ranges: 0 to 70 °C -25 to 85 °C -40 to 85 °C
❐ Quality assessment according to CECC 90000, CECC 90100 and CECC 90111
❐ ESD protection > 2000 V (MIL STD 883C M3015.7)
❐ Latch-up immunity > 200 mA
❐ Packages: PDIP28 (300 mil) SOJ28 (300 mil)

Zentrum Mikroelektronik Dresden AG
Zentrum Mikroelektronik Dresden AG
Description : Fast 8K x 24 SRAM

Description
The U62H824 is a static RAM manufactured using a CMOS process technology. The device integrates an 8K x 24 SRAM core with multiple chip enable inputs, output enable, and an externally controlled single address pin multiplexer. These functions allow for direct connection to the Motorola DSP56k Digital Signal Processor Family and provide a very efficient means for implementation of a reduced parts count system requiring no additional interface logic.

Features
❐ 196 608 bit static CMOS RAM
❐ 35 ns Access Time
❐ Fully static Read and Write operations
❐ Equal address and chip enable access times
❐ Single bit on-chip address multiplexer
❐ Active high and active low chip enable inputs
❐ Output enable controlled threestate outputs
❐ TTL/CMOS-compatible
❐ Low power standby mode
❐ Power supply voltage 5 V
❐ Operating temperature range 0 °C to 70 °C -40 °C to 85 °C
❐ CECC 90000 Quality Standard
❐ ESD protection > 2000 V (MIL STD 883C M3015.7)
❐ Latch-up immunity > 100 mA
❐ Package: PLCC52

Description : Standard 8K x 8 SRAM

Description
The U6264A is a static RAM manufactured using a CMOS process technology with the following operating modes:
    - Read - Standby
    - Write - Data Retention
The memory array is based on a 6-transistor cell.
   
Features
❐ 8192 x 8 bit static CMOS RAM
❐ 70 and 100 ns Access Times
❐ Common data inputs and
    outputs
❐ Three-state outputs
❐ Typ. operating supply current
    70 ns: 45 mA
    100 ns: 37 mA
❐ Data retention current
    at 3 V: < 10 µA (standard)
❐ Standby current standard < 30 µA
❐ Standby current low power
    (L) < 10 µA
❐ Standby current very low power
    (LL) < 1 µA
❐ Standby current for LL-version
    at 25 °C and 5 V: typ. 50 nA
❐ TTL/CMOS-compatible
❐ Automatic reduction of power
    dissipation in long Read or Write
    cycles
❐ Power supply voltage 5 V
❐ Operating temperature ranges:
    0 to 70 °C
    -25 to 85 °C
    -40 to 85 °C
❐ Quality assessment according to
    CECC 90000, CECC 90100 and
    CECC 90111
   

Description : Standard Pitch DIP Adapters

[Accutek]

FEATURES
• Saves costly redesign of current motherboards
• Fully tested with lifetime limited warranty
• May include an on board decoupling capacitor
• IC assembly and testing available
• EPROM and Flash programming available
• Custom lead lengths available
• Custom multi-chip and double-sided modules available

Part Name(s) : UTXQ512
Aeroflex Corporation
Aeroflex Corporation
Description : CONVERTING AEROFLEX UTMC UT9Q512 4M SRAM into an SEU IMMUNE 1M X 1 SRAM

CONVERTING AEROFLEX UTMC UT9Q512 4M SRAM into an SEU IMMUNE 1M X 1 SRAM

This application note describes how to use two UT9Q512 4M SRAMs and one UT54ACS151 logic device to mimic a 1Mx1 SRAM. As shown below, the single bit is written into three locations of the same. When the data is read out, it is used in a voting system to select either a 0 or a 1 output. This voting method virtually makes it immune to SEU hits. Since the bits of a word are not physically adjacent on the die, it is nearly impossible for one particle to cause two bits to flip in the same word. As such, it would require multiple particle hits to cause an upset.

Hyundai Micro Electronics
Hyundai Micro Electronics
Description : 8K X 8-Bit CMOS SRAM

DESCRIPTION
The HY6264A is a high speed, low power and 8,192 words by 8-bits CMOS static RAM fabricated using a twin tub CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields maximum access time of 70ns.

Description : CMOS 8K x 8 TIMEKEEPER SRAM

DESCRIPTION
The M48T08,18 TIMEKEEPER™ RAM is an 8K x 8 non-volatile static RAM and real time clock which is pin and functional compatible with the MK48T08,18. The monolithic chip is available in two special packages to provide a highly integrated battery backed-up memory and real time clock solution.

■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK and POWER-FAIL CONTROL CIRCUIT
■ BYTEWIDE RAM-LIKE CLOCK ACCESS
■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS
■ CLOCK ACCURACY of ± 1 MINUTE a MONTH, @ 25°C
■ SOFTWARE CONTROLLED CLOCK
■ CALIBRATION for HIGH ACCURACY APPLICATIONS
■ AUTOMATICPOWER-FAIL CHIP DESELECT and WRITE PROTECTION
■ CHOICE of TWO WRITE PROTECT VOLTAGES:
   – M48T08: 4.5V ≤ VPFD ≤ 4.75V
   – M48T18: 4.2V ≤ VPFD ≤ 4.5V
■ SELF CONTAINED BATTERY and CRYSTAL in the CAPHAT DIP PACKAGE
■ SMALL OUTLINE PACKAGE PROVIDES DIRECT CONNECTION for a SNAPHAT HOUSING CONTAINING the BATTERY and CRYSTAL
■ SNAPHAT HOUSING (BATTERY and CRYSTAL) REPLACEABLE
■ 10 YEARS of DATA RETENTION and CLOCK OPERATION in the ABSENCE of POWER
■ PIN and FUNCTION COMPATIBLE with JEDEC STANDARD 8K x 8 SRAMs

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