Description and Applications The MA4E2508 SurMountä Anti-Parallel DIODE Series are Silicon Low, Medium & High BARRIER SCHOTTKY Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form DIODEs or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount SCHOTTKY devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The SurMount structure employs very low resistance silicon vias to connect the SCHOTTKY contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead SCHOTTKY DIODEs. The multi-layer metalization employed in the fabrication of the Surmount SCHOTTKY junctions includes a platinum diffusion BARRIER, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300°C. The “ 0502 ” outline allows for Surface Mount placement and multi- functional polarity orientations. The MA4E2508 Family of SurMount SCHOTTKY DIODEs are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead DIODEs with the corresponding Surmount DIODE, which can be connected to a hard or soft substrate circuit with solder.
Features ● Extremely Low Parasitic Capitance and Inductance ● Surface Mountable in Microwave Circuits, No Wirebonds Required ● Rugged HMIC Construction with Polyimide Scratch Protection ● Reliable, Multilayer Metalization with a Diffusion ● BARRIER, 100% Stabilization Bake (300°C, 16 hours) ● Lower Susceptibility to ESD Damage
Description The MicroMetrics MNM 200 series of Medium BARRIER SCHOTTKY DIODEs are metal semiconductor junction devices that have a typical short reverse recovery time. This allows their use at high microwave frequencies when the performance of the n-TYPE may be reduced. The forward I-V of SCHOTTKY DIODEs is determined by the junction metal used. For every different metal selection there is a different forward voltage characteristic or “BARRIER Height”. These devices are best suited for applications through 26 GHz.
Features • Multi-Junction Chips • Low 1/F Noise • Small Junction Capacitance
Applications Medium BARRIER SCHOTTKY Mixer DIODEs are ideally suited for use in mixers, doublers and modulators.
General Description SCHOTTKY (SCHOTTKY) DIODE is also known as SCHOTTKY BARRIER Rectifiers (SBR),) has been in the power supply industry for 25 years, it is a low-power, ultra-high speed semiconductor devices, widely used in switching power supplies, frequency converters, Driver circuit, such as high frequency, low voltage, high current rectifier DIODE, continuous current DIODE, protection DIODE, or microwave communication circuit as rectifier DIODE, small signal detector DIODE.
FEATURES ● Compact package, easy to install ● Efficient overvoltage protection device ● Ultra-low forward pressure drop ● Ideal products for High Frequency Circuits ● Comply with relevant welding international standard MIL-STD-202
These SCHOTTKY BARRIER DIODEs are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE
DESCRIPTION SCHOTTKY BARRIER devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broadband designs. The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metallization schemes produce Microsemi’s complete line of BARRIER heights. DIODEs are currently available with BARRIER heights as low as 240 mV and up to 625 mV per junction. By optimizing epitaxy and metallization, these devices achieve the lowest RS-CJ products resulting in exceptional conversion loss performance. “High Rel” screening is available on packaged devices per your requirements. This series of devices meets RoHS requirements per EU Directive 2002/95/EC.
KEY FEATURES ■ Monolithic design for lowest parasitics ■ Low Conversion Loss ■ Suitable for applications to 26.5 GHz ■ Excellent Noise Figure ■ Available in low, medium and high BARRIER heights ■ Can be supplied as monolithic devices for hybrid applications or as packaged devices ■ RoHS Compliant1
DESCRIPTION The µ PA1980 is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low leakage SCHOTTKY BARRIER DIODE, and is suitable for applications such as DC/DC converter of portable machine and so on.
FEATURES • 1.8 V drive available (MOS FET) • Low on-state resistance (MOS FET) RDS(on)1 = 135 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A) RDS(on)2 = 183 mΩ MAX. (VGS = −2.5 V, ID = −1.0 A) RDS(on)3 = 284 mΩ MAX. (VGS = −1.8 V, ID = −0.5 A) • Low reverse current (SCHOTTKY BARRIER DIODE) IR = 20 µA MAX. (VR = 40 V)
SCHOTTKY BARRIER DIODE Dual Series SCHOTTKY BARRIER DIODE for Mixer and Detector 5V, 30mA, 0.69pF, CP
Features • Series connection of 2 elements in a small-sized package facilitates high-density mounting and permits 1SS351-applied equipment to be made smaller • Small interterminal capacitance (C=0.69pF typ) • Small forward voltage (VF=0.23V max)
Description and Applications The MA4E1339 series is a silicon medium BARRIER SCHOTTKY DIODE suitable for use in mixer, detector and limiter circuits. These DIODEs are also usable in anti-parallel, shunt power surge protection circuits for 50 Ω and 75 Ω systems.
Features • RF & Microwave Medium BARRIER Silicon 20 V SCHOTTKY DIODE • Available as Single DIODE, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Packages • Lead Free (RoHS Compliant) Equivalents Available With 260 Deg. C Reflow Capability
Description and Applications The MA4E1340 series is a silicon medium BARRIER SCHOTTKY DIODE suitable for use in mixer, detector and limiter circuits. These DIODEs are also suitable for usage in anti-parallel, shunt power surge protection circuits for 50 Ω and 75 Ω systems.
Features • RF & Microwave Medium BARRIER Silicon 70 V SCHOTTKY DIODE • Available as Single DIODE, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Package • Lead Free (RoHS Compliant) Equivalents Available With 260 Deg. C Reflow Capability
Description and Applications The MA4E1338 series is a silicon medium BARRIER SCHOTTKY DIODE suitable for use in mixer, detector and limiter circuits. These DIODEs are also suitable for usage in anti-parallel, shunt power surge protection circuits for 50 Ω and 75 Ω systems.
Features • RF & Microwave Medium BARRIER Silicon 8 V SCHOTTKY DIODE • Available as Single DIODE, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Package • Lead Free (RoHS Compliant) Equivalents Available With 260 Deg. C Reflow Capability