Description and Applications The MA4E2508 SurMountä Anti-Parallel Diode Series are Silicon Low, Medium & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form Diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The SurMount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky Diodes. The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion Barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300°C. The “ 0502 ” outline allows for Surface Mount placement and multi- functional polarity orientations. The MA4E2508 Family of SurMount Schottky Diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead Diodes with the corresponding Surmount Diode, which can be connected to a hard or soft substrate circuit with solder.
Features ● Extremely Low Parasitic Capitance and Inductance ● Surface Mountable in Microwave Circuits, No Wirebonds Required ● Rugged HMIC Construction with Polyimide Scratch Protection ● Reliable, Multilayer Metalization with a Diffusion ● Barrier, 100% Stabilization Bake (300°C, 16 hours) ● Lower Susceptibility to ESD Damage
Agilent offers a complete family of high performance Low Barrier Schottky Diode Detectors which cover the 10 MHz to 26.5 GHz frequency range. These general purpose components are widely used for CW and pulsed power detection, leveling of sweepers, and frequencyresponse testing of other microwave components. These detectors do not require a dc bias and can be used with common oscilloscopes, thus their simplicity of operation and excellent broadband performance make them useful measurement accessories. These detectors use a Low-Barrier Schottky Diode (LBSD), specially fabricated with low origin resistance and low junction capacitance. This results in improved broadband flatness and SWR over point-contact Diode detectors, thus yielding more accurate measurements. These detectors also offer very good ruggedness and burnout protection. As with all Agilent detectors, these models integrate the Diode with the other circuit elements thus minimizing stray reactances and optimizing broadband performance. For economical field repair, replaceable detector modules are available.
• Excellent broadband flatness • Low broadband SWR • High burnout protection • Environmentally rugged • Field replaceable Diode elements
Description The Skyworks SMS392x-099 family of Si Schottky Diodes are configured as ring quads intended for use in double-balanced mixers. Each ring quad die is comprised of four Schottky junctions, connected anode to cathode. There are three Barrier heights available: SMS3926 is composed of low-Barrier Diodes, which can be driven with low-power local oscillator signals; SMS3927 is composed of medium-Barrier Diodes, for applications in which moderate-power local oscillator signals are available; and, SMS3928 is composed of high-Barrier Diodes for applications that require very low distortion performance and have higher local oscillator power available. These ring quads are 100% tested, sawn and supplied on film frame in wafer quantities.
Features ● Designed for high-performance, double-balanced mixers ● Three Barrier heights available ● Schottky Diodes supplied 100% tested, sawn, mounted on film frame ● Low cost ● Available lead (Pb)-free, RoHS-compliant, and Green
Description The MicroMetrics MNM 200 series of Medium Barrier Schottky Diodes are metal semiconductor junction devices that have a typical short reverse recovery time. This allows their use at high microwave frequencies when the performance of the n-type may be reduced. The forward I-V of Schottky Diodes is determined by the junction metal used. For every different metal selection there is a different forward voltage characteristic or “Barrier Height”. These devices are best suited for applications through 26 GHz.
Features • Multi-Junction Chips • Low 1/F Noise • Small Junction Capacitance
Applications Medium Barrier Schottky Mixer Diodes are ideally suited for use in mixers, doublers and modulators.
General Description Schottky (Schottky) Diode is also known as Schottky Barrier Rectifiers (SBR),) has been in the power supply industry for 25 years, it is a low-power, ultra-high speed semiconductor devices, widely used in switching power supplies, frequency converters, Driver circuit, such as high frequency, low voltage, high current rectifier Diode, continuous current Diode, protection Diode, or microwave communication circuit as rectifier Diode, small signal detector Diode.
FEATURES ● Compact package, easy to install ● Efficient overvoltage protection device ● Ultra-low forward pressure drop ● Ideal products for High Frequency Circuits ● Comply with relevant welding international standard MIL-STD-202
Description Schottky (Schottky) Diode is also known as Schottky Barrier Rectifiers (SBR),) has been in the power supply industry for 25 years, it is a low-power, ultra-high speed semiconductor devices, widely used in switching power supplies, frequency converters, Driver circuit, such as high frequency, low voltage, high current rectifier Diode, continuous current Diode, protection Diode, or microwave communication circuit as rectifier Diode, small signal detector Diode.
Features ● Compact package, easy to install ● High-efficiency overvoltage protection device ● Ultra-low forward pressure drop ● Ideal products for High Frequency Circuits ● Ultra-low leakage current IR=0.1UA ● Comply with relevant welding international standard MIL-STD-202
Description The SMS7621-060 is a silicon, low-Barrier N-type Schottky Diode with an ultra-miniature 0201 footprint. This Diode may be used in detector circuits, sampling circuits, and mixer circuits. The low series resistance of this low-Barrier Diode enables good performance as a low-level mixer at frequencies up to 26 GHz and higher.
Features • Low Barrier height • Suitable for use above 26 GHz • Low parasitic impedance: CP < 0.05 pF, LS < 0.2 nH • Low profile, ultra-miniature 0201 SMT package rated MSL1, 260 °C per JEDEC J-STD-020
DESCRIPTION Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broadband designs. The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metallization schemes produce Microsemi’s complete line of Barrier heights. Diodes are currently available with Barrier heights as low as 240 mV and up to 625 mV per junction. By optimizing epitaxy and metallization, these devices achieve the lowest RS-CJ products resulting in exceptional conversion loss performance. “High Rel” screening is available on packaged devices per your requirements. This series of devices meets RoHS requirements per EU Directive 2002/95/EC.
KEY FEATURES ■ Monolithic design for lowest parasitics ■ Low Conversion Loss ■ Suitable for applications to 26.5 GHz ■ Excellent Noise Figure ■ Available in low, medium and high Barrier heights ■ Can be supplied as monolithic devices for hybrid applications or as packaged devices ■ RoHS Compliant1
The Schottky Power Rectifier employs the Schottky Barrier principle with a Barrier metal that produces optimal forward voltage drop–reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection Diodes in surface mount applications where compact size and weight are critical to the system. This package provides an alternative to the leadless 34 MELF style package. These state–of–the–art devices have the following features:
• Guardring for Stress Protection • Very Low Forward Voltage (0.38 V Max @ 0.5 A, 25°C) • 125°C Operating Junction Temperature • Epoxy Meets UL94, VO at 1/8″ • Package Designed for Optimal Automated Board Assembly
The Schottky Power Rectifier employs the Schottky Barrier principle with a Barrier metal that produces optimal forward voltage drop−reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection Diodes in surface mount applications where compact size and weight are critical to the system. This package provides an alternative to the leadless 34 MELF style package. These state−of−the−art devices have the following features:
• Guardring for Stress Protection
• Very Low Forward Voltage (0.38 V Max @ 0.5 A, 25°C)
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Package Designed for Optimal Automated Board Assembly