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Description : Intelligent Frequency Synthesizers

[umc]



DESCRIPTION:

The PNP-1090-P22 is a complete low noise frequency synthesizer, comprised of VCO, PLL, loop filter and data interface. The PNP family of RF signal sources is the world’s first truly configurable frequency synthesizer module.



FEATURES:

∗  1500-2500 MHz Frequency Range

∗  Programmable Step Size

∗  Low Integrated Phase Noise

∗  Simplified Programming



APPLICATIONS:

∗  Wireless Infrastructure

∗  Test Equipment

∗  Wireless LAN


Part Name(s) : PNP_ PNP(CONT.)_
Fairchild Semiconductor
Fairchild Semiconductor
Description : FAIRCHILD Small Signal Transistors

GENERAL PURPOSE SMALL SIGNAL TransistorS

Part Name(s) : FZT789A-PNP FZT789A
Zetex => Diodes
Zetex => Diodes
Description : SOT223 PNP Silicon PLANAR MEDIUM Power HIGH GAIN Transistor

FEATURES
* Extremely low equivalent on-resistance; RCE(sat) 93mΩ at 3A
* Gain of 200 at IC=2 Amps and very low saturation voltage

APPLICATIONS
* Battery Powered circuits, fast charge converters

Astec Semiconductor => Silicon Link
Astec Semiconductor => Silicon Link
Description : Semicustom Bipolar Array

Description

The AS17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual Transistors and resistors in a fixed configuration. The custom circuit is manufactured by creating a single metal mask to connect the components. This allows the designer to deal with only one mask for the IC layout instead of the actual 10 mask process.



Features

Size (single tile)

• 87 x 75 mils Expandability of array (to 2 or 4 tiles)

Component Availability (single tile)

• Small NPN 48

• Dual collector PNP 21

• Vertical PNP 4

Power NPN 3

• Diffused Resistors (total) ≈300 kΩ

• Pinch Resistors (3-terminal, 30kΩ) 8

• Cross-unders 13

• Buses 6



Basic Electrical Specs

Transistor Matching (NPN & PNP) <2%

• Primary voltage limitations:

   LVCEO 18 V

   BVCBO 30 V

• Diffusion to substrate

   (Ground) 30 V

• NPN Parameters

   Beta 80–500

   fT(1mA) 300 MHz

   BVEBO 7 V

PNP Parameters:

   Beta 20–300

   fT(1mA) 300 MHz

   BVEBO 30 V


Part Name(s) : 2N6211 2N6212 2N6213
Boca Semiconductor
Boca Semiconductor
Description : PNP Silicon Power Transistor

MEDIUM-Power HIGH VOLTAGE PNP Power TransistorS

2 AMPERE Power TransistorS PNP Silicon 225-350 VOLTS 35 WATTS

Part Name(s) : 2SA1659 A1659
Inchange Semiconductor
Inchange Semiconductor
Description : Silicon PNP Power Transistor

DESCRIPTION

·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min)

·Complement to Type 2SC4370

·Full-mold package that does not require an insulating board or bushing when mounting.



APPLICATIONS

·Designed for high voltage applications


Part Name(s) : 2SB680
Inchange Semiconductor
Inchange Semiconductor
Description : Silicon PNP Power Transistor

DESCRIPTION

·High Power Dissipation-: PC= 100W(Max.)@TC=25℃

·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min.)

·Complement to Type 2SC1080



APPLICATIONS

·Designed for audio Power amplifier applications.


Part Name(s) : 2N2880 2N3749
Microsemi Corporation
Microsemi Corporation
Description : PNP Power Silicon Transistor (Rev - 2001)

PNP Power Silicon Transistor

Qualified per MIL-PRF-19500/315

Description : PNP Power Silicon Transistor

PNP Power Silicon Transistor Qualified per MIL-PRF-19500/545

Part Name(s) : 2SA1170
Unspecified
Unspecified
Description : Silicon PNP Power Transistor

Silicon PNP Power Transistor

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