ESDA6V1-BC6 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ESDA6V1-BC6 Datasheet PDF : 6 Pages
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ESDA6V1BC6
Figure 4: Clamping voltage versus peak pulse
current (typical values, rectangular waveform)
Figure 5: Junction capacitance versus line
voltage applied (typical values
IPP(A)
20.0
10.0
1.0
0.1
0
VCL(V)
tp = 2.5µs
Tj initial = 25°C
5
10
15
20
25
30
35
40
C(pF)
22
21
F = 1MHz
VOSC = 30mV
20
Tj = 25°C
19
18
17
16
15
14
13
12
11
VR(V)
10
0
1
2
3
4
5
6
7
8
Figure 6: Relative variation of leakage current
versus junction temperature (typical values)
IR[Tj] / IR[Tj=25°C]
500
100
10
Tj(°C)
1
25
50
75
100
125
150
1. ESD protection by ESDA6V1-4BC6
With the focus of lowering the operation levels, the problem of malfunction caused by the environment is
critical. Electrostatic discharge (ESD) is a major cause of failure in electronic system.
Transient Voltage Suppressors are an ideal choice for ESD protection and have proven capable in sup-
pressing ESD events. They are capable of clamping the incoming transient to a low enough level such
that damage to the protected semiconductor is prevented.
Surface mount TVS arrays offer the best choice for minimal lead inductance.
They serve as parallel protection elements, connected between the signal line to ground. As the transient
rises above the operating voltage of the device, the TVS array becomes a low impedance path diverting
the transient current to ground.
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