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M24128-DRHMTP View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
M24128-DRHMTP
ST-Microelectronics
STMicroelectronics 
M24128-DRHMTP Datasheet PDF : 46 Pages
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M24128-BW M24128-BR M24128-BF M24128-DF
DC and AC parameters
Figure 12. AC measurement I/O waveform
)NPUTVOLTAGELEVELS
6##
6##
)NPUTANDOUTPUT
4IMINGREFERENCELEVELS
6##
6##
-36
Symbol
Table 10. Input parameters
Parameter(1)
Test condition
CIN
Input capacitance (SDA)
-
CIN
Input capacitance (other pins)
-
ZL
Input impedance (E2, E1, E0, WC)(2)
ZH
VIN < 0.3 VCC
VIN > 0.7 VCC
1. Characterized only, not tested in production.
2. E2, E1, E0 input impedance when the memory is selected (after a Start condition).
Min. Max. Unit
-
8
pF
-
6
pF
50
-
kΩ
500 -
kΩ
Table 11. Cycling performance
Symbol Parameter
Test condition
Max.(1)
Unit
Ncycle
Write cycle
endurance(2)
TA ≤ 25 °C, VCC(min) < VCC < VCC(max)
TA = 85 °C, VCC(min) < VCC < VCC(max)
4,000,000 Write cycle(3)
1,200,000
1. Cycling performance for products identified by process letter K or T (previous products were specified with
1 million cycles at 25 °C)
2. The Write cycle endurance is defined by characterization and qualification. For devices embedding the
ECC functionality (see Chapter 5.1.5), the write cycle endurance is defined for group of four bytes located
at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an integer.
3. A Write cycle is executed when either a Page Write, a Byte write, a Write Identification Page or a Lock
Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write
Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and Write cycling
Table 12. Memory cell data retention
Parameter
Test condition
Min.
Unit
Data retention(1)
TA = 55 °C
200(2)
Year
1. The data retention behavior is checked in production, while the data retention limit defined in this table is
extracted from characterization and qualification results.
2. For products identified by process letter K or T (previous products were specified with a data retention of 40
years at 55°C).
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