BAT54WS-V-GS08(2006) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
| BAT54WS-V-GS08 Datasheet PDF : 0 Pages | |||
Small Signal Schottky Diode
BAT54WS-V
Vishay Semiconductors
Features
• These diodes feature very low turn-on
voltage and fast switching
e3
• These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges
• Lead (Pb)-free component
20145
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOD323 Plastic case
Weight: approx. 4.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAT54WS-V
Ordering code
BAT54WS-V-GS18 or BAT54WS-V-GS08
Type Marking
L4
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
30
V
Forward continuous current
Tamb = 25 °C
IF
2001)
mA
Repetitive peak forward current Tamb = 25 °C
IFRM
3001)
mA
Surge forward current
tp < 1 s, Tamb = 25 °C
IFSM
6001)
mA
Power dissipation1)
Tamb = 25 °C
Ptot
1501)
mW
1) Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
Maximum junction temperature
Storage temperature range
RthJA
Tj
Tstg
6501)
125
- 65 to + 150
K/W
°C
°C
1) Valid provided that electrodes are kept at ambient temperature
Document Number 85667
Rev. 1.5, 14-Nov-06
www.vishay.com
1
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