BF1206F View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BF1206F Datasheet PDF : 20 Pages
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Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
Table 11: Dynamic characteristics for amplifier B …continued
Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA.
Symbol Parameter
Conditions
Min Typ
Xmod cross modulation
input level for k = 1 %; fw = 50 MHz; funw = 60 MHz [2]
at 0 dB AGC
89 -
at 10 dB AGC
- 85
at 40 dB AGC
93 98
Max Unit
- dBµV
- dBµV
- dBµV
[1] Calculated from measured S-parameters.
[2] Measured in Figure 32 test circuit.
8.3.1 Graphs for amplifier B
15
ID
(mA)
10
(1) (2)
001aad911
(3)
5
(4)
0
0
0.4
0.8
1.2
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(B) = 2.8 V; Tj = 25 °C.
1.6
2.0
VG1−S (V)
Fig 17. Amplifier B: transfer characteristics; typical
values
16
(1)
ID
(mA)
12
001aad912
(2)
(3)
8
(4)
(5)
4
(6)
(7)
0
0
1
2
3
4
VDS (V)
(1) VG1-S(B) = 1.3 V.
(2) VG1-S(B) = 1.2 V.
(3) VG1-S(B) = 1.1 V.
(4) VG1-S(B) = 1.0 V.
(5) VG1-S(B) = 0.9 V.
(6) VG1-S(B) = 0.85 V.
(7) VG1-S(B) = 0.8 V.
VG2-S = 2.5 V; Tj = 25 °C.
Fig 18. Amplifier B: output characteristics; typical
values
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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