BF1206F View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BF1206F Datasheet PDF : 20 Pages
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Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
100
IG1
(µA)
80
60
40
001aad913
(1)
(2)
(3)
20
(4)
0
0
0.5
1.0
1.5
2.0
2.5
VG1−S (V)
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(B) = 2.8 V; Tj = 25 °C.
Fig 19. Amplifier B: gate1 current as a function of
gate1 voltage; typical values
16
ID
(mA)
12
001aad915
8
4
40
Yfs
(mS)
30
20
001aad914
(1)
(2)
10
(4)
(3)
0
0
4
8
12
16
ID (mA)
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(B) = 2.8 V; Tj = 25 °C.
Fig 20. Amplifier B: forward transfer admittance as a
function of drain current; typical values
6
ID
(mA)
4
001aad916
2
0
0
10
20
30
IG1 (µA)
0
0
1
2
3
VGG (V)
VDS(B) = 2.8 V; VG2-S = 2.5 V, Tamb = 25 °C.
Fig 21. Amplifier B: drain current as a function of gate1
current; typical values
VDS(B) = 2.8 V; VG2-S = 2.5 V; RG1(B) = 220 kΩ;
see Figure 32.
Fig 22. Amplifier B: drain voltage as a function of gate1
supply voltage (=VGG); typical values
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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