BF1206F View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BF1206F Datasheet PDF : 20 Pages
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Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
10
ID
(mA)
8
6
4
2
001aad917
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
6
ID
(mA)
4
2
001aad918
(1)
(2)
(3)
(4)
(5)
0
0
1
2
3
4
VGG = VDS (V)
(1) RG1 = 120 kΩ.
(2) RG1 = 150 kΩ.
(3) RG1 = 180 kΩ.
(4) RG1 = 220 kΩ.
(5) RG1 = 270 kΩ.
(6) RG1 = 330 kΩ.
(7) RG1 = 390 kΩ.
(8) RG1 = 470 kΩ.
VG2-S = 2.5 V; RG1(B) connected to VGG;
see Figure 32.
Fig 23. Amplifier B: drain current as a function of VDS
and VGG; typical values
0
0
1
2
3
4
VG2−S (V)
(1) VGG = 3.0 V.
(2) VGG = 2.5 V.
(3) VGG = 2.0 V.
(4) VGG = 1.5 V.
(1) VGG = 1.0 V.
RG1(B) = 220 kΩ; Tj = 25 °C; see Figure 32.
Fig 24. Amplifier B: drain current as a function of gate2
voltage; typical values
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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