BF1206F View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BF1206F Datasheet PDF : 20 Pages
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Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
102
bis, gis
(mS)
10
1
10−1
001aad922
bis
gis
102
Yfs
(mS)
10
001aad923 −102
Yfs
ϕfs
(deg)
−10
ϕfs
10−2
10
102
103
f (Mhz)
VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V;
ID(B) = 4 mA.
Fig 28. Amplifier B: input admittance and phase as a
function of frequency; typical values
1
Yrs
(µS)
10−1
001aad924 103
ϕrs
(deg)
ϕrs
102
1
−1
10
102
103
f (MHz )
VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V;
ID(B) = 4 mA.
Fig 29. Amplifier B: forward transfer admittance and
phase as a function of frequency; typical values
10
bos, gos
(mS)
1
001aad925
bos
10−2
Yrs
10
10−1
gos
10−3
10X
1
102
103
f (MHz)
10−2
10
102
103
f (MHz)
VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V;
ID(B) = 4 mA.
Fig 30. Amplifier B: reverse transfer admittance and
phase as a function of frequency: typical values
VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V;
ID(B) = 4 mA.
Fig 31. Amplifier B: output admittance and phase as a
function of frequency; typical values
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
15 of 20
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