BF1206F View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

BF1206F

Dual N-channel dual gate MOSFET

Philips Electronics 

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

1.4 Quick reference data

Table 1: Quick reference data

Per MOSFET unless otherwise specified.

Symbol Parameter

Conditions

VDS

drain-source voltage (DC)

ID

drain current (DC)

|yfs|

forward transfer admittance ID = 4 mA

amplifier A

amplifier B

Ciss(G1) input capacitance at gate1

ID = 4 mA; f = 100 MHz

amplifier A

amplifier B

NF

noise figure

ID = 4 mA

amplifier A; f = 400 MHz

amplifier B; f = 800 MHz

Xmod cross modulation

input level for k = 1 % at

40 dB AGC

amplifier A

amplifier B

Min Typ Max Unit

- - 6V

- - 30 mA

17 22 32 mS

17 22 32 mS

- 2.4 2.9 pF

- 1.7 2.2 pF

- 1.0 1.6 dB

- 1.0 1.6 dB

92 97 -

93 98 -

dBµV

dBµV

2. Pinning information

Table 2:

Pin

1

2

3

4

5

6

Discrete pinning

Description

gate1 (AMP A)

source

gate1 (AMP B)

drain (AMP B)

drain (AMP A)

gate2

Simplified outline Symbol

654

AMP A

G1A

G2

123

S

DA

AMP B

G1B

DB

sym111

3. Ordering information

Table 3: Ordering information

Type number Package

Name Description

BF1206F

-

plastic surface mounted package; 6 leads

Version

SOT666

BF1206F_1

Product data sheet

Rev. 01 — 30 January 2006

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

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