ESDALC6V1M3 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ESDALC6V1M3 Datasheet PDF : 12 Pages
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Characteristics
1
Characteristics
ESDALC6V1M3
Table 1.
Symbol
Absolute ratings (Tamb = 25 °C)
Parameter
Value
VPP
Peak pulse
voltage
IEC 61000-4-2 air discharge
IEC 61000-4-2 contact discharge
PPP Peak pulse power dissipation (8/20 µs)(1)
Tj initial = Tamb
Ipp Repetitive peak pulse current (8/20 µs)
Tj Operating junction temperature range
Tstg Storage temperature range
TL Maximum lead temperature for soldering during 10 s
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
± 15
± 11
30
3
-40 + 125
-55 + 150
260
Figure 2. Electrical characteristics (definitions)
Symbol
VBR
=
IRM
=
VRM
=
VCL
=
Rd
=
IPP
=
IR
=
αT
=
VF
=
Parameter
Breakdown voltage
Leakage current @ VRM
Stand-off voltage
Clamping voltage
Dynamic impedance
Peak pulse current
Breakdown current
Voltage temperature coefficient
Forward voltage drop
I
IF
VCL VBR VRM
VF
IRM
IR
Slope = 1/Rd IPP
Unit
kV
W
A
°C
°C
°C
V
Table 2.
Symbol
Electrical characteristics (Tamb = 25 °C)
Test condition
VBR IR = 1 mA
IRM VRM = 5 V
αT IR = 1 mA
C VR = 0 V, F = 1 MHz, VOSC = 30 mV
Min.
6.1
Typ.
11
Max. Unit
7.2
V
0.5
µA
4.2 10-4/°C
pF
2/12
Doc ID 11555 Rev 5
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