PHP11N50E View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

PHP11N50E

PowerMOS transistors Avalanche energy rated

Philips Electronics 

Philips Semiconductors

PowerMOS transistors

Avalanche energy rated

Preliminary specification

PHP11N50E, PHB11N50E, PHW11N50E

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

IS

Continuous source current Tmb = 25˚C

(body diode)

ISM

Pulsed source current (body Tmb = 25˚C

diode)

VSD

Diode forward voltage

IS = 10.4 A; VGS = 0 V

trr

Reverse recovery time

IS = 10.4 A; VGS = 0 V; dI/dt = 100 A/µs

Qrr

Reverse recovery charge

MIN. TYP. MAX. UNIT

-

- 10.4 A

-

- 42 A

-

- 1.2 V

- 600 - ns

-

9

- µC

January 1998

3

Rev 1.000

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