S2N7002KT View Datasheet(PDF) - Secos Corporation.
Part Name
Description
Manufacturer
S2N7002KT Datasheet PDF : 4 Pages
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Elektronische Bauelemente
S2N7002KT
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
CHARACTERISTICS
SYMBOL MIN TYP MAX UNIT
Off Characteristics (Note2)
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
30
-
-
V VGS = 0V, ID = 100μA
Zero Gate Voltage Drain Current
IDSS
-
-
1.0
μA VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±25
On Characteristics(Note2)
μA VGS= ±10V, VDS=0V
Gate Threshold Voltage
VGS(th)
0.5 1.0 1.5
V VDS=VGS, ID=100μA
Static Drain-Source On Resistance
RDS(ON)
-
1.4 7.0
VGS=4.5V, ID =154mA
Ω
-
2.3 7.5
VGS=2.5V, ID =154mA
Forward transfer admittance
gfs
-
80
-
Dynamic Characteristics
mS VDS=3V, ID =154mA
Input Capacitance
Ciss
-
11.5
-
Output Capacitance
Coss
-
10
-
pF VDS=5V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
Crss
-
3.5
-
Switching Characteristics
Turn-On Delay Time
Td(ON)＊
-
13
-
Rise Time
Turn-Off Delay Time
Tr
-
15
-
VDS=5.0V, VGS=4.5V, ID=75mA,
nS
Td(OFF)＊
-
98
-
RG=10Ω
Fall Time
Tf
-
60
-
Source-Drain Diode Characteristics
Input Capacitance
VSD
＊Pulse Test：pulse width ≦ 300μs, Duty cycle ≦ 2％
-
0.77 0.9
V VGS=0V, IS=0.154mA
09-Apr-2010 Rev. A
Page 2 of 4
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