DSPIC33EV64GM102-I/SO View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

DSPIC33EV64GM102-I/SO

16-Bit, 5V Digital Signal Controllers with PWM, SENT, Op Amps and Advanced Analog Features

Microchip Technology 

dsPIC33EVXXXGM00X/10X FAMILY

5.2 RTSP Operation

RTSP allows the user application to erase a single

page of memory, program a row and to program two

instruction words at a time. See Table 1 in the

“dsPIC33EVXXXGM00X/10X Product Families”

section for the page sizes of each device.memory array

is organized into rows of 64 instructions or 192 bytes.

RTSP allows the user application to era

The Flash program memory array is organized into

rows of 64 instructions or 192 bytes. RTSP allows the

user application to erase a page of program memory,

which consists of eight rows (512 instructions) at a

time, and to program one row or two adjacent words at

a time. The 8-row erase pages and single row write

rows are edge-aligned, from the beginning of program

memory, on boundaries of 1536 bytes and 192 bytes,

respectively. Table 30-13 in Section 30.0 “Electrical

Characteristics” lists the typical erase and

programming times.

The basic sequence for RTSP word programming is to

use the TBLWTL and TBLWTH instructions to load two of

the 24-bit instructions into the write latches found in

configuration memory space. See Figure 4-1 to

Figure 4-5 for write latch addresses. Programming is

performed by unlocking and setting the control bits in

the NVMCON register.

Row programming is performed by loading 192 bytes

into data memory and then loading the address of the

first byte in that row into the NVMSRCADR register.

Once the write has been initiated, the device will auto-

matically load the write latches and increment the

NVMSRCADR and the NVMADR(U) registers until all

bytes have been programmed. The RPDF bit

(NVMCON<9>) selects the format of the stored data in

RAM to be either compressed or uncompressed. See

Figure 5-2 for data formatting. Compressed data helps

to reduce the amount of required RAM by using the

upper byte of the second word for the MSB of the second

instruction.

For more information on erasing and programming the

Flash memory, refer to “Flash Programming”

(DS70609) in the “dsPIC33/PIC24 Family Reference

Manual”.

Note 1: Before reprogramming either of the two

words in a double-word pair, the user

must erase the Flash memory page in

which it is located.

2: Before reprogramming any word in a row,

the user must erase the Flash memory

page in which it is located.

FIGURE 5-2:

UNCOMPRESSED/

COMPRESSED FORMAT

15

7

0

LSW1

0x00

MSB1

Even Byte

Address

LSW2

0x00

MSB2

UNCOMPRESSED FORMAT (RPDF = 0)

15

7

LSW1

MSB2

MSB1

LSW2

0

Even Byte

Address

COMPRESSED FORMAT (RPDF = 1)

5.3 Programming Operations

A complete programming sequence is necessary for

programming or erasing the internal Flash in RTSP

mode. The processor stalls (waits) until the program-

ming operation is finished. Setting the WR bit

(NVMCON<15>) starts the operation and the WR bit is

automatically cleared when the operation is finished.

5.3.1

PROGRAMMING ALGORITHM FOR

FLASH PROGRAM MEMORY

Programmers can program two adjacent words

(24 bits x 2) of program Flash memory at a time on

every other word address boundary (0x000002,

0x000006, 0x00000A, etc.). To do this, erase the page

that contains the desired address of the location the

user wants to change. For protection against accidental

operations, the write initiate sequence for NVMKEY

must be used to allow any erase or program operation

to proceed. After the programming command has been

executed, the user application must wait for the

programming time until programming is complete. The

two instructions following the start of the programming

sequence should be NOPs.

Refer to “Flash Programming” (DS70609) in the

“dsPIC33/PIC24 Family Reference Manual” for details

and code examples on programming using RTSP.

DS70005144E-page 84

 2013-2016 Microchip Technology Inc.

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