BUV298AV(1997) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BUV298AV Datasheet PDF : 7 Pages
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BUV298AV
THERMAL DATA
Rthj-ca se Thermal Resistance Ju nction-case
Rthc-h Thermal Resistance Case-heatsin k With Conductive
Grease Applied
Max
Max
0.5
0.05
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER Collecto r Cu t-of f
Current (RBE = 5 Ω)
VCE = VCEV
VCE = VCEV
Tj = 100 oC
ICEV Collecto r Cu t-of f
Current (VBE = -5V)
VCE = VCEV
VCE = VCEV
Tj = 100 oC
IEBO Emitter Cut-off Current
(IC = 0)
VCEO(SUS) * Collecto r-Emitter
Sustaining Voltage
hFE∗ DC Current Gain
VCE(sat)∗ Collecto r-Emitter
Saturation Voltage
VEB = 5 V
IC = 0.2 A L = 25 mH
Vclamp = 450 V
IC = 32 A VCE = 5 V
IC = 32 A IB = 6 .4 A
IC = 32 A IB = 6 .4 A Tj = 100 oC
VBE( sat)∗ Base-Emitter
Saturation Voltage
IC = 32 A IB = 6 .4 A
IC = 32 A IB = 6 .4 A Tj = 100 oC
diC/dt Rate of Rise of
On-state Collector
VCC = 3 00 V RC = 0 tp = 3 µs
IB1 = 9.6 A Tj = 100 oC
VCE (3 µs) Collecto r-Emitter
Dynamic Voltage
VCC = 300 V RC = 9 .3 Ω
IB1 = 9.6 A Tj = 100 oC
VCE(5 µs) Collecto r-Emitter
Dynamic Voltage
VCC = 300 V RC = 9 .3 Ω
IB1 = 9.6 A Tj = 100 oC
ts
Storage Time
tf
Fall Time
tc
Cross-over Time
IC = 32 A VCC = 50 V
VBB = -5 V RBB = 0 .3 9 Ω
Vclamp = 450 V IB1 = 6.4 A
L = 78 µH Tj = 100 oC
VCEW Maximu m Collector
ICWoff = 48 A IB1 = 6.4 A
Emitter Voltage
VBB = -5 V VCC = 5 0 V
With ou t Snubber
L = 52 µH RBB = 0.39 Ω
Tj = 1 25 oC
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ.
450
12
0.35
0.6
1
0.9
160 210
4.5
2.5
3.2
0.25
0.5
450
Max.
0. 4
2
0. 4
2
2
1. 2
2
1. 5
1. 5
8
4
4. 5
0. 4
0. 7
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
A/µs
V
V
µs
µs
µs
V
2/7
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