SD1891-03
RF & MICROWAVE TRANSISTORS
1.6 GHz SATCOM APPLICATIONS
.......1.65 GHz
28 VOLTS
GOLD METALLIZED SYSTEM
POLYSILICON SITE BALLASTING
OVERLAY DIE GEOMETRY
HIGH RELIABILITY AND RUGGEDNESS
POUT = 5.0 W MIN. WITH 14.0 dB GAIN
.230 2LFL (M151)
hermetically sealed
ORDER CODE
SD1891-03
B RA ND IN G
1891-03
PIN CONNECTION
DESCRIPTION
The SD1891-03 is a 28 V silicon NPN transistor
designed for INMARSAT and other 1.6 GHz SAT-
COM applications. This device utilizes polysilicon
site ballasting with a gold metallized die to achieve
high reliability and ruggedness.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
March 1993
1. Collector
2. Emitter
3. Base
Value
Unit
45
V
15
V
3.5
V
1.1
A
8.8
W
+200
°C
− 65 to +200
°C
20.0
°C/W
1/5