STPS6045C View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS6045C Datasheet PDF : 9 Pages
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Characteristics
Characteristics
STPS6045C
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
45
IF(RMS) RMS forward current
60
IF(AV)
Average forward current
δ = 0.5
Tc = 150 °C per diode
30
IFSM
Surge non repetitive
forward current
tp = 10 ms sinusoidal
400
IRRM
Repetive peak reverse
current
tp = 2 µs square
F = 1 kHz
1
IRSM
Non repetitive peak reverse
current
tp = 100 µs square
3
PARM
Tstg
Tj
dV/dt
Repetitive peak avalanche tp = 1 µs
power
Tj = 25 °C
Storage temperature range
Maximum operating junction temperature(1)
Critical rate of rise or reverse voltage
10600
- 65 to + 175
175
10000
1. d----dP----T-t--o-j---t R-----t--h-----1--j---–----a---- condition to avoid thermal runaway for a diode on its own heatsink
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
Symbol
Rth(j-c)
Rth(c)
Table 3. thermal resistances
Parameter
Junction to case
Per diode
Total
Coupling
Value
0.95
0.55
0.15
When the diodes 1 and 2 are simultaneously:
∆ Tj(diode 1) = P(diode1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
Unit
°C/W
2/9
DocID4606 Rev 8
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