STP6NB25 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP6NB25 Datasheet PDF : 9 Pages
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STP6NB25/FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.66
TO-220FP
4.17
62.5
0.5
300
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
6
200
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID(on)
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID =3 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min. Typ. Max. Unit
2
3
4
V
0.9
1.1
Ω
6
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 3A
3
S
Ciss
Input Capacitance
260
pF
Coss
Output Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
68
pF
Crss
Reverse Transfer
Capacitance
9
pF
2/9
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