STS2DNF30L View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STS2DNF30L

Dual N-channel 30V - 0.09Ω - 3A SO-8 STripFET™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STS2DNF30L

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS Breakdown voltage

Zero gate voltage

IDSS Drain current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

ID = 250 µA, VGS = 0

VDS = Max rating

VDS=Max rating,

TC=125°C

VGS = ±18V

VDS = VGS, ID = 250µA

VGS = 10V, ID = 1A

VGS = 5V, ID = 1A

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS>ID(on)xRDS(on)max

ID=2.5A

VDS = 25V, f = 1 MHz,

VGS = 0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 24V, ID = 2A,

VGS = 10V

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.

Min. Typ. Max. Unit

30

V

1 µA

10 µA

±100 nA

1

1.7 2.5 V

0.09 0.11 Ω

0.13 0.15 Ω

Min. Typ. Max. Unit

2.5

S

121

pF

45

pF

11

pF

4.5

nC

1.7

nC

0.9

nC

Table 5. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

Turn-off delay time

Fall time

Test conditions

VDD=15 V, ID=1A,

RG=4.7Ω, VGS= 4.5V

(see Figure 12)

VDD=15 V, ID=1A,

RG=4.7Ω, VGS= 4.5V

(see Figure 12)

Min. Typ. Max. Unit

19

ns

20

ns

12

ns

8

ns

4/12

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