STS2DNF30L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STS2DNF30L Datasheet PDF : 12 Pages
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STS2DNF30L
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2A, VGS = 0
ISD = 2A, VDD = 30V
di/dt = 100A/µs,
Tj = 150°C
(see Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
3
A
12 A
1.3 V
19
ns
8.1
nC
0.85
A
5/12
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