2SA1300-Y - TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) - Toshiba Datasheet

Strobe Flash Applications
Medium Power Amplifier Applications

• High DC current gain and excellent hFE linearity
    : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A)
    : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
• Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −50 mA)