2SJ557-T1B - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - NEC Datasheet

DESCRIPTION
The 2SJ557 is a switching device which can be driven directly by a 4 V power source.
The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

FEATURES
• Can be driven by a 4 V power source
• Low on-state resistance
   RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)
   RDS(on)2 = 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A)
   RDS(on)3 = 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)