N01L83W2A - 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit - ONSEMI Datasheet

Part Name

N01L83W2A

Description

1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit

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File Size

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MFG CO.

ON Semiconductor 

Overview

The N01L83W2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N01L83W2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40°C to +85°C and is available in JEDEC standard packages compatible with other standard 128Kb x 8 SRAMs.

Features

• Single Wide Power Supply Range

   2.3 to 3.6 Volts

• Very low standby current

   2.0µA at 3.0V (Typical)

• Very low operating current

   2.0mA at 3.0V and 1µs (Typical)

• Very low Page Mode operating current

   0.8mA at 3.0V and 1µs (Typical)

• Simple memory control

   Dual Chip Enables (CE1and CE2)

   Output Enable (OE) for memory expansion

• Low voltage data retention

   Vcc = 1.8V

• Very fast output enable access time

   30ns OE access time

• Automatic power down to standby mode

• TTL compatible three-state output driver

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