DatasheetQ Logo
Electronic Components and Semiconductors search and free download site. Transistors,MosFET,IGBT,Triac,SCR,Diode,Integrated circuits
Home >>> Renesas Electronics >>> N0300N Datasheet

N0300N - N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - Renesas Datasheet

N0300N Datasheet PDF Renesas Electronics

Part Name
N0300N

Other PDF
  not available.

PDF

page
8 Pages

File Size
230 kB

MFG CO.
Renesas
Renesas Electronics 

DESCRIPTION
The N0300N is a switching device which can be driven directly by a 4.5 V power source.
The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• 4.5 V drive available
• Low on-state resistance
   RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 2.0 A)
   RDS(on)2 = 83 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
• Built-in gate protection diode

Share Link: GO URL

All Rights Reserved© datasheetq.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]