N04L163WC1AT-70I - 4Mb Ultra-Low Power Asynchronous CMOS SRAM - NANOAMP Datasheet

Overview
The N04L163WC1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power.
   
Features
• Single Wide Power Supply Range
    2.3 to 3.6 Volts
• Very low standby current
    4.0µA at 3.0V (Typical)
• Very low operating current
    2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
    0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
    Single Chip Enable (CE)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Low voltage data retention
    Vcc = 1.8V
• Very fast output enable access time
    25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package available