N04L163WC1C - 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit - ETC Datasheet

[NanoAmp Solutions, Inc.]

Overview
The N04L163WC1C is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

FEATUREs
• Single Wide Power Supply Range
   2.2 to 3.6 Volts
• Very low standby current
   2.0µA at 3.0V (Typical)
• Very low operating current
   1.5mA at 3.0V and 1µs (Typical)
• Simple memory control
   Single Chip Enable (CE)
   Byte control for independent byte operation
   Output Enable (OE) for memory expansion
• Low voltage data retention
   Vcc = 1.5V
• Very fast output enable access time
   25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package available
• Ultra Low Power Sort Available