N04Q16XXC2BX - 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction - AMI Datasheet

Overview
The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide ultra-low active and standby power.

FEATUREs
• Multiple Power Supply Ranges
    1.1V - 1.3V
    1.65V - 1.95V
• Dual Vcc / VccQ Power Supplies
    1.2V Vcc with 3V VccQ
    1.8V Vcc with 3V VccQ
• Very low standby current
    50nA typical for 1.2V operation
• Very low operating current
    400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
    80µA typical for 1.2V operation at 1µs
• Simple memory control
    Dual Chip Enables (CE1 and CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Automatic power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant