N08L163WC1C - 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit - NANOAMP Datasheet

Overview
The N08L163WC1C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

FEATUREs
• Single Wide Power Supply Range
    2.2 to 3.6 Volts
• Very low standby current
    2.0µA at 3.0V (Typical)
• Very low operating current
    1.5mA at 3.0V and 1µs(Typical)
• Simple memory control
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Low voltage data retention
    Vcc = 1.5V
• Very fast output enable access time
    25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Ultra Low Power Sort Avaliable