DatasheetQ Logo
Electronic Components and Semiconductors search and free download site. Transistors,MosFET,IGBT,Triac,SCR,Diode,Integrated circuits
Home >>> NEC => Renesas Technology >>> NP50P06KDG Datasheet

NP50P06KDG - SWITCHING P-CHANNEL POWER MOSFET - NEC Datasheet

NP50P06KDG Datasheet PDF NEC => Renesas Technology

Part Name
NP50P06KDG

Other PDF
  not available.

PDF

page
7 Pages

File Size
174.2 kB

MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.


FEATURES
•Super low on-state resistance
  RDS(on)1= 17 mΩMAX. (VGS= −10 V, ID= −25 A)
  RDS(on)2= 23 mΩMAX. (VGS= −4.5 V, ID= −25 A)
•Low input capacitance
  Ciss = 5000 pF TYP.

Page Link's: 1  2  3  4  5  6  7 
Part Name
Description
View
MFG CO.
SWITCHING P-CHANNEL POWER MOSFET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET ( Rev : 2009 )
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
PDF
Renesas Electronics

Share Link: GO URL

All Rights Reserved© datasheetq.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]