NP50P06KDG - SWITCHING P-CHANNEL POWER MOSFET - NEC Datasheet
MFG CO.

NEC => Renesas Technology
DESCRIPTION
The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
•Super low on-state resistance
RDS(on)1= 17 mΩMAX. (VGS= −10 V, ID= −25 A)
RDS(on)2= 23 mΩMAX. (VGS= −4.5 V, ID= −25 A)
•Low input capacitance
Ciss = 5000 pF TYP.
Page Link's:
1
2
3
4
5
6
7
Part Name
Description
View
MFG CO.
SWITCHING P-CHANNEL POWER MOSFET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET ( Rev : 2009 )
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOSFET
Renesas Electronics