NTE312 - N–Channel Silicon Junction Field Effect Transistor - NTE-Electronic Datasheet

Description:
The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package.

FEATUREs:
• High Power Gain: 10dB Min at 400MHz
• High Transconductance: 4000 µmho Min at 400MHz
• Low Crss: 1pF Max
• High (Yfs) / Ciss Ratio (High–Frequency Figure–of–Merit)
• Drain and Gate Leads Separated for High Maximum Stable Gain
• Cross–Modulation Minimized by Square–Law Transfer Characteristic
• For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment