UPA1811 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - NEC Datasheet
MFG CO.

NEC => Renesas Technology
DESCRIPTION
The µPA1811 is a switching device which can be driven directly by a 2.5-V power source.
The µPA1811 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
• Can be driven by a 2.5- V power source
• Low on-state resistance
RDS(on)1 = 75 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A)
RDS(on)2 = 80 mΩ MAX. (VGS = –4.0 V, ID = –2.0 A)
RDS(on)3 = 120 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A)
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Part Name
Description
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MFG CO.
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics