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UPA1817 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - NEC Datasheet

UPA1817 Datasheet PDF NEC => Renesas Technology

Part Name
UPA1817

Other PDF
  not available.

PDF

page
8 Pages

File Size
70.3 kB

MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The µPA1817 is a switching device which can be driven directly by a 2.5 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on.


FEATURES
• 2.5 V drive available
• Low on-state resistance
    RDS(on)1 = 12 mΩ MAX. (VGS = −4.5 V, ID = −6.0 A)
    RDS(on)2 = 12.5 mΩ MAX. (VGS = −4.0 V, ID = −6.0 A)
    RDS(on)3 = 19.2 mΩ MAX. (VGS = −2.5 V, ID = −6.0 A)
• Built-in G-S protection diode against ESD

Page Link's: 1  2  3  4  5  6  7  8 
Part Name
Description
View
MFG CO.
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics

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