UPA1817 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - NEC Datasheet
MFG CO.

NEC => Renesas Technology
DESCRIPTION
The µPA1817 is a switching device which can be driven directly by a 2.5 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = −4.5 V, ID = −6.0 A)
RDS(on)2 = 12.5 mΩ MAX. (VGS = −4.0 V, ID = −6.0 A)
RDS(on)3 = 19.2 mΩ MAX. (VGS = −2.5 V, ID = −6.0 A)
• Built-in G-S protection diode against ESD
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Part Name
Description
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MFG CO.
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics