DatasheetQ Logo
Electronic Components and Semiconductors search and free download site. Transistors,MosFET,IGBT,Triac,SCR,Diode,Integrated circuits
Home >>> NEC => Renesas Technology >>> UPA1830GR-9JG Datasheet

UPA1830GR-9JG - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - NEC Datasheet

UPA1830GR-9JG Datasheet PDF NEC => Renesas Technology

Part Name
UPA1830GR-9JG

Other PDF
  not available.

PDF

page
8 Pages

File Size
69.1 kB

MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The µPA1830 is a switching device which can be driven directly by a 4.0 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on.


FEATURES
• 4.0 V drive available
• Low on-state resistance
    RDS(on)1 = 17 mΩ MAX. (VGS = −10 V, ID = −4.5 A)
    RDS(on)2 = 24.5 mΩ MAX. (VGS = −4.5 V, ID = −4.5 A)
    RDS(on)3 = 28 mΩ MAX. (VGS = −4.0 V, ID = −4.5 A)
• Built-in G-S protection diode against ESD

Page Link's: 1  2  3  4  5  6  7  8 
Part Name
Description
View
MFG CO.
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics

Share Link: GO URL

All Rights Reserved© datasheetq.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]