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Home >>> NEC => Renesas Technology >>> UPA1851CR-9JG Datasheet

UPA1851CR-9JG - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - NEC Datasheet

UPA1851CR-9JG Datasheet PDF NEC => Renesas Technology

Part Name
UPA1851CR-9JG

Other PDF
  not available.

PDF

page
8 Pages

File Size
60 kB

MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The µPA1851 is a switching device which can be driven directly by a 4.0-V power source.
The µPA1851 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• Can be driven by a 4.0-V power source
• Low on-state resistance
    RDS(on)1 = 105 mΩ MAX. (VGS = –10 V, ID = –1.5 A)
    RDS(on)2 = 210 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
    RDS(on)3 = 250 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A)
• Built-in G-S protection diode against ESD

Part Name
Description
View
MFG CO.
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics

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