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UPA1902TE-T1 - N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - NEC Datasheet

UPA1902TE-T1 Datasheet PDF NEC => Renesas Technology

Part Name
UPA1902TE-T1

Other PDF
  not available.

PDF

page
6 Pages

File Size
124.5 kB

MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The µPA1902 is a switching device, which can be driven directly by a 4.5 V power source.
This µPA1902 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management switch of portable machine and so on.


FEATURES
• 4.5 V drive available
• Low on-state resistance
    RDS(on)1 = 17 mΩ TYP. (VGS = 10 V, ID = 3.5 A)
    RDS(on)2 = 22 mΩ TYP. (VGS = 4.5 V, ID = 3.5 A)

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Part Name
Description
View
MFG CO.
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics

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