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UPA1911TE-T2 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - NEC Datasheet

UPA1911TE-T2 Datasheet PDF NEC => Renesas Technology

Part Name
UPA1911TE-T2

Other PDF
  not available.

PDF

page
8 Pages

File Size
58.6 kB

MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The µPA1911 is a switching device which can be driven directly by a 2.5-V power source.
The µPA1911 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• Can be driven by a 2.5-V power source
• Low on-state resistance
    RDS(on)1 = 115 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
    RDS(on)2 = 120 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A)
    RDS(on)3 = 190 mΩ MAX. (VGS = –2.5 V, ID = –1.0A)

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Part Name
Description
View
MFG CO.
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics

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