UPA678TB - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - NEC Datasheet

DESCRIPTION
The µ PA678TB is a switching device, which can be driven directly by a 2.5 V power source.
The µ PA678TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

FEATURES
• 2.5 V drive available
• Low on-state resistance
   RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.20 A)
   RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.20 A)
   RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
• Two MOS FET circuits in same size package as SC-70