PHKD13N03LT - Dual N-channel TrenchMOS logic level FET - NXP Hoja de datos

General description
   Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

FEATUREs and benefits
■ Low conduction losses due to low
   on-state resistance
■ Simple gate drive required due to low
   gate charge
■ Suitable for high frequency
   applications due to fast switching
   characteristics

APPLICATIONs
■ DC-to-DC convertors
■ Lithium-ion battery applications
■ Notebook computers
■ Portable equipment