PHKD3NQ10T - Dual N-channel TrenchMOS standard level FET - NXP Hoja de datos

General description
Dual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

FEATUREs and benefits
■ Low conduction losses due to low
   on-state resistance
■ Suitable for high frequency
   applications due to fast switching
   characteristics
■ Suitable for use in compact designs
   due to low profile

APPLICATIONs
■ DC-to-DC converters 
■ Motor and relay drivers