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S2N7002ET7G - 60V N-Channel Enhancement Mode MOSFET - LEIDITECH Hoja de datos

S2N7002ET7G Datasheet PDF Shanghai Leiditech Electronic Technology Co., Ltd

Número de pieza
S2N7002ET7G

Other PDF
  not available.

PDF

page
5 Pages

File Size
3.1 MB

Fabricante
LEIDITECH
Shanghai Leiditech Electronic Technology Co., Ltd 

Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage

General Features
● VDS 60V
● ID 300mA
● RDS(ON)( at VGS=10V) <2.5ohm
● RDS(ON)( at VGS=4.5V) <3.0ohm
● ESD Protected Up to 2.0KV (HBM)


APPLICATION
● Battery operated systems
● Solid-state relays
● Direct logic-level interface:TTL/CMOS

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