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SI9926DY - Dual N-Channel 2.5V Specified PowerTrench MOSFET - Fairchild Hoja de datos

SI9926DY Datasheet PDF Fairchild Semiconductor

Número de pieza
SI9926DY

Other PDF
  not available.

PDF

page
5 Pages

File Size
78.5 kB

Fabricante
Fairchild
Fairchild Semiconductor 

General Description
These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).


FEATUREs
• 6.5 A, 20 V. RDS(ON) = 0.030 Ω @ VGS = 4.5 V RDS(ON) = 0.043 Ω @ VGS = 2.5 V.
• Optimized for use in battery protection circuits
• ±10 VGSS allows for wide operating voltage range
• Low gate charge


APPLICATIONs
• Battery protection
• Load switch
• Power management

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