NTMD6N02R2G  Hoja de datos

ON Semiconductor

Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2A, Schottky Barrier Diode

ON Semiconductor

Power MOSFET and Schottky Diode

ON Semiconductor

MOSFET – Power, Single, P-Channel, Schottky Diode, Schottky Barrier Diode -30 V, -4.0 A, 20 V, 2.2A

ON Semiconductor

MOSFET – Power, Single, P-Channel, Schottky Diode, Schottky Barrier Diode -30 V, -4.0 A, 20 V, 2.2A

VBsemi Electronics Co.,Ltd

Dual P-Channel 30-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd

Dual N-Channel 20-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd

Dual N-Channel 60 V (D-S) 175 °C MOSFET

ON Semiconductor

Power MOSFET 2.3 Amps, 80 Volts N−Channel Enhancement−Mode SO−8 Dual Package

VBsemi Electronics Co.,Ltd

Dual N-Channel 30-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd

Dual N-Channel 30-V (D-S) MOSFET

ON Semiconductor

Power MOSFET 2.3 Amps, 80 Volts N–Channel Enhancement–Mode SO–8 Dual Package

ON Semiconductor

Power MOSFET 2.3 Amps, 80 Volts N−Channel Enhancement−Mode SO−8 Dual Package

VBsemi Electronics Co.,Ltd

Dual N-Channel 30 V (D-S) MOSFET

ON Semiconductor

Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2A, Schottky Barrier Diode