C565-30V - SPECIFICATION OF LED CHIP - ROITHNER 데이터시트
제조사

Roithner LaserTechnik GmbH
[Yellow Green]
1) Commodity Type and Physical Characteristics.
1. Material InGaAlP/GaAs
2. Electrode Top Side P (anode) side : Au Alloy/Au or Au Pad
Bottom Side N (cathode) side : Au Alloy
3. Electrode Pattern Fig.1
4. Chip Size Fig.2
5. Chip Thickness Fig.2
6. Emission Area Fig.2
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
SPECIFICATION OF MODULE
Varitronix international limited
SPECIFICATION OF MODULE
Varitronix international limited
SPECIFICATION OF MODULE
Varitronix international limited
Specification of GaAlAs IR Emitting Diode Chip ( Rev : 2011 )
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors