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1N5061TAP(2012) View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
1N5061TAP
(Rev.:2012)
Vishay
Vishay Semiconductors Vishay
1N5061TAP Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
1N5059, 1N5060, 1N5061, 1N5062
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
IF = 1 A
VF
-
IF = 2.5 A
VF
-
VR = VRRM
IR
-
VR = VRRM, Tj = 100 °C
IR
-
VR = VRRM, Tj = 150 °C
IR
-
1N5059
V(BR)R
225
IR = 100 μA
1N5060
V(BR)R
450
1N5061
V(BR)R
650
1N5062
V(BR)R
900
VR = 0 V, f = 1 MHz
CD
-
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
TYP.
-
-
-
-
-
-
-
-
-
40
-
MAX
1
1.15
1
10
100
1600
1600
1600
1600
-
4
UNIT
V
V
μA
μA
μA
V
V
V
V
pF
μs
200
VR = VRRM
160
RthJA =
45 K/W
1N5062
120
100 K/W
1N5061
160 K/W
80
1N5060
40
1N5059
0
25 50 75 100 125 150 175
15764
Tj - Junction Temperature ( °C )
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
3.0
VR = VRRM
2.5
half sinewave
2.0
RthJA = 45 K/W
l =10 mm
1.5
1.0
0.5
RthJA = 100 K/W
PCB: d = 25 mm
0.0
0 20 40 60 80 100 120 140 160 180
15763_1
Tamb - Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
100
VR = VRRM
10
1
0.1
25
15765
50 75 100 125 150 175
Tj - Junction Temperature ( °C )
Fig. 2 - Max. Reverse Current vs. Junction Temperature
100
Tj = 175 °C
10
Tj = 25 °C
1
0.1
0.01
0.001
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
15762
VF - Forward Voltage ( V )
Fig. 4 - Max. Forward Current vs. Forward Voltage
Rev. 1.7, 12-Sep-12
2
Document Number: 86000
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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