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1N5195 View Datasheet(PDF) - Compensated Devices => Microsemi

Part Name
Description
Manufacturer
1N5195
CDI
Compensated Devices => Microsemi CDI
1N5195 Datasheet PDF : 2 Pages
1 2
• AVAILABLE IN JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating: 1.2 mA/°C From 25°C to 150°C
1.0 mA/°C From 150°C to 175°C
Forward Current: 650 mA
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE
1N5194
1N5195
1N5196
VRM
V RWM
V (pk)
80
180
250
V (pk)
70
180
225
IO
IO
I FSM
TA = 150°C TP = 1/120 s
TA = 25°C
mA
mA
A
200
50
2
200
50
2
200
50
2
TYPE
1N5194
1N5195
1N5196
VF
@100mA
I R1 at V RWM I R2 at V RM I R3 at V RWM
TA = 25°C
TA = 25°C
TA = 150°C
V dc
nA dc
µA
0.8 - 1.0
25
100
0.8 - 1.0
25
100
0.8 - 1.0
25
100
µA dc
5
5
5
1N5194
1N5195
1N5196
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
250 ˚C/W maximum
THERMAL IMPEDANCE:
˚C/W maximum
(ZOJX):
70
POLARITY: Cathode end is banded.
MOUNTING POSITION: ANY.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com
 

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