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1N5344B(2012) View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
1N5344B
(Rev.:2012)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
1N5344B Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
1N53 Series
100
10
1
0.1
80
100
120
140 160
180
200 220
VZ, ZENER VOLTAGE (VOLTS)
Figure 9. Zener Voltage versus Zener Current
VZ = 82 thru 200 Volts
APPLICATION NOTE
Since the actual voltage available from a given Zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = qLA PD + TA
qLA is the lead-to-ambient thermal resistance and PD is the
power dissipation.
Junction Temperature, TJ, may be found from:
TJ = TL + DTJL
DTJL is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 1 for dc power.
DTJL = qJL PD
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ (DTJ) may be estimated.
Changes in voltage, VZ, can then be found from:
DV = qVZ DTJ
qVZ, the Zener voltage temperature coefficient, is found
from Figures 2 and 3.
Under high power-pulse operation, the Zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 4 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 5 be exceeded.
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