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1N6485 View Datasheet(PDF) - Electronics Industry

Part Name
Description
Manufacturer
1N6485
EIC
Electronics Industry EIC
1N6485 Datasheet PDF : 2 Pages
1 2
Certificate TH97/10561QM
Certificate TW00/17276EM
1N4460 - 1N4496 and
1N6485 - 1N6491
VZ : 3.3 - 200 Volts
PD : 1.5 Watts
FEATURES :
* Silicon power zener diodes
* Complete Voltage Range 3.3 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
MECHANICAL DATA :
* Case : M1A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram (approximately)
SILICON ZENER DIODES
M1A
0.085(2.16)
0.075(1.91)
0.024(0.60)
0.022(0.55)
1.00 (25.4)
MIN.
0.138(3.51)
0.122(3.10)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS (Rating at 25 °C ambient temperature unless otherwise specified)
Rating
Power Dissipation at Ta = 25 °C
Maximum Forward Voltage at IF = 200 mA
Thermal Resistance , Junction to Lead (Note 1)
Operating Temperature
Storage Temperature Range
Note : (1) At 3/8"(10 mm) lead length form body.
Symbol
PD
VF
RӨJA
TJ
TSTG
Value
1.5
1.0
42
- 65 to + 175
- 65 to + 175
Unit
W
V
°C/W
°C
°C
Page 1 of 2
Fig. 1 POWER TEMPERATURE DERATING CURVE
1.5
1.2
0.9
0.6
L = 3/8" (10 mm)
0.3
0
0
25 50 75 100 125 150 175
Ta, AMBIENT TEMPERATURE (°C)
Rev. 03 : November 2, 2006
 

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