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BF1206F View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BF1206F
Philips
Philips Electronics Philips
BF1206F Datasheet PDF : 20 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
8.3.2 Scattering parameters for amplifier B
Table 12: Scattering parameters for amplifier B
VDS(B) = 2.8 V; VG2-S = 2.5 V; ID(B) = 4 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values.
f (MHz) s11
s21
s12
s22
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
50
0.9939
3.12 2.27
176.11 0.00089
94.68 0.993
100
0.9936
6.29 2.26
172.41 0.00170
84.37 0.993
200
0.9896
12.47 2.25
164.98 0.00336
81.29 0.992
300
0.9845
18.59 2.23
157.64 0.00503
77.17 0.990
400
0.9779
24.66 2.20
150.35 0.00642
73.23 0.988
500
0.9703
30.55 2.16
143.16 0.00769
69.72 0.986
600
0.9620
36.37 2.13
136.02 0.00873
66.28 0.983
700
0.9529
42.10 2.08
129.01 0.00967
63.19 0.980
800
0.9439
47.79 2.04
122.01 0.01024
60.51 0.977
900
0.9353
53.24 1.99
115.30 0.01058
58.52 0.975
1000 0.9266
58.46 1.94
108.64 0.01074
57.24 0.973
8.3.3 Noise data for amplifier B
Table 13: Noise data for amplifier B
VDS(B) = 2.8 V; VG2-S = 2.5 V; ID(B) = 4 mA.
f (MHz)
NFmin (dB)
400
0.9
800
1.0
Γopt
ratio
0.8
0.83
(deg)
19
46
rn (ratio)
0.9
0.96
Angle
(deg)
1.62
3.23
6.44
9.65
12.85
16.00
19.18
22.37
25.50
28.66
31.85
9. Test information
VAGC
R1
10 k
C1
4.7 nF
RGEN
50
VI
C2
4.7 nF
R2
50
RG1
VGG
Fig 32. Cross-modulation test setup (for one MOSFET)
C3
4.7 nF
DUT
L1
2.2 µH
C4
4.7 nF
VDS
RL
50
001aad926
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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